STMicroelectronics, Type N-Channel IGBT, 115 A 650 V, 4-Pin TO-247, Through Hole

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€ 169,71

(excl. BTW)

€ 205,35

(incl. BTW)

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30 - 30€ 5,657€ 169,71
60 +€ 5,374€ 161,22

*prijsindicatie

RS-stocknr.:
206-6063
Fabrikantnummer:
STGW75H65DFB2-4
Fabrikant:
STMicroelectronics
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STMicroelectronics

Maximum Continuous Collector Current Ic

115A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

357W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

4

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Height

5.1mm

Width

21.1 mm

Length

15.9mm

Series

STG

Automotive Standard

No

The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature: TJ = 175 °C

Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive VCE(sat) temperature coefficient

Excellent switching performance thanks to the extra driving kelvin pin

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