Infineon IGW30N65L5XKSA1, Type N-Channel IGBT, 85 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 215-6634
- Fabrikantnummer:
- IGW30N65L5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 17,22
(excl. BTW)
€ 20,835
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 185 stuk(s) vanaf 21 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 3,444 | € 17,22 |
| 25 - 45 | € 2,824 | € 14,12 |
| 50 - 120 | € 2,618 | € 13,09 |
| 125 - 245 | € 2,446 | € 12,23 |
| 250 + | € 2,272 | € 11,36 |
*prijsindicatie
- RS-stocknr.:
- 215-6634
- Fabrikantnummer:
- IGW30N65L5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 85A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 227W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | LowVCE(sat) Fifth Generation | |
| Standards/Approvals | Pb-free lead plating, RoHS, JEDEC | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 85A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 227W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series LowVCE(sat) Fifth Generation | ||
Standards/Approvals Pb-free lead plating, RoHS, JEDEC | ||
Automotive Standard No | ||
The Infineon fifth generation insulated-gate bipolar transistor with low saturation voltage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference