Infineon, Type N-Channel IGBT Single Transistor IC, 85 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 226-6112
- Fabrikantnummer:
- IKW30N65EL5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 78,48
(excl. BTW)
€ 94,95
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 570 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 2,616 | € 78,48 |
| 60 - 120 | € 2,485 | € 74,55 |
| 150 + | € 2,38 | € 71,40 |
*prijsindicatie
- RS-stocknr.:
- 226-6112
- Fabrikantnummer:
- IKW30N65EL5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 85A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 227W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Maximum Operating Temperature | 175°C | |
| Series | LowVCE(sat) Fifth Generation | |
| Standards/Approvals | JEDEC | |
| Length | 41.9mm | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 85A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 227W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Maximum Operating Temperature 175°C | ||
Series LowVCE(sat) Fifth Generation | ||
Standards/Approvals JEDEC | ||
Length 41.9mm | ||
Height 5.3mm | ||
Automotive Standard No | ||
The Infineon IKW30N65EL5 has 650V breakdown voltage used very low collector-emitter saturation voltage and higher efficiency for 50Hz. It has longer lifetime and higher reliability of IGBT.
Low gate charge QG
Maximum junction temperature 175°C
Qualified according to JEDEC for target applications
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