Infineon FP100R12KT4BOSA1 IGBT Module 1200 V

RS-stocknr.:: 244-5379
Fabrikantnummer:: FP100R12KT4BOSA1
Fabrikant:: Infineon

Infineon FP100R12KT4BOSA1 IGBT Module 1200 V

Subtotaal (10 eenheden, op een tray van 10)*

€ 1.071,30

(excl. BTW)

€ 1.296,30

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 09 april 2027

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Aantal stuks	Per stuk	Per tray*
10 +	€ 107,13	€ 1.071,30

*prijsindicatie

RS-stocknr.:: 244-5379
Fabrikantnummer:: FP100R12KT4BOSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	515W
	Number of Transistors	7
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.1V
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Series	FP100R12KT4
	Width	62mm
	Height	17mm
	Length	122mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 515W
	Number of Transistors 7
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Series FP100R12KT4
	Width 62mm
	Height 17mm
	Length 122mm
	Automotive Standard No

Datasheet - FP100R12KT4BOSA1

Infineon FP100R12KT4 Series IGBT Module, 1200V Max Collector-Emitter Voltage, 515W Maximum Power Dissipation - FP100R12KT4BOSA1

This IGBT module is a high-voltage switching component designed for power-electronics applications requiring elevated voltage handling and thermal endurance. It is intended to manage significant power dissipation in industrial environments and operates across a wide temperature range, offering compatibility where automotive-grade alternatives are not required.

Features and Benefits:

• 1200 V blocking capability enabling high-voltage switching
• 515 W power dissipation capacity for heavy-duty loads
• VGE limit of 20 V for controlled gate-drive design
• VCE(sat) of 2.1 V reducing conduction losses under load
• Seven-transistor configuration providing dense switching topology
• 150 °C maximum junction rating for high-temperature operation

Applications

• Suitable for industrial motor-drive inverter stages
• Ideal for medium-voltage power converters and UPS systems
• Used with high-power switching arrays in renewable inverters
• Can be used for traction and heavy-equipment power modules

What gate-drive constraint should be observed?

The device requires gate-emitter voltages not exceeding 20 V to prevent gate damage.

How does thermal tolerance affect cooling design?

A maximum operating temperature of 150 °C permits smaller heatsink margins but still requires an adequate thermal Interface and cooling for continuous 515 W dissipation.

What electrical stress does the module withstand during blocking?

It is specified to withstand collector-emitter voltages up to 1200 V in off-state conditions.

How many switching elements are present internally?

The module contains seven transistors to support multi-switch topologies.

Are there any material restrictions for selection?

The unit conforms to RoHS requirements and therefore excludes certain restricted substances.