Infineon FP15R12W1T4BOMA1 IGBT Module 1200 V

RS-stocknr.:: 244-5387
Fabrikantnummer:: FP15R12W1T4BOMA1
Fabrikant:: Infineon

Infineon FP15R12W1T4BOMA1 IGBT Module 1200 V

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 eenheid)*

€ 37,45

(excl. BTW)

€ 45,31

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 19 februari 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk
1 - 1	€ 37,45
2 - 4	€ 35,59
5 - 9	€ 32,04
10 +	€ 31,84

*prijsindicatie

RS-stocknr.:: 244-5387
Fabrikantnummer:: FP15R12W1T4BOMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	130W
	Number of Transistors	7
	Maximum Collector Emitter Saturation Voltage VceSAT	2.25V
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	33.8mm
	Series	FP15R12W1T4B
	Length	62.8mm
	Height	12mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 130W
	Number of Transistors 7
	Maximum Collector Emitter Saturation Voltage VceSAT 2.25V
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 33.8mm
	Series FP15R12W1T4B
	Length 62.8mm
	Height 12mm
	Automotive Standard No

Datasheet - FP15R12W1T4BOMA1

Infineon FP15R12W1T4B Series IGBT Module, 1200V Collector-Emitter Voltage, 130W Power Dissipation - FP15R12W1T4BOMA1

This IGBT module is a power semiconductor assembly designed to switch and control high-voltage DC loads in industrial power electronics. It delivers controlled switching capability for demanding thermal and electrical environments, operating across a wide temperature span and conforming to RoHS requirements.

Features and Benefits:

• Vceo rating of 1200 V affords high-voltage switching capability
• Power dissipation up to 130 W enables sustained thermal load handling
• Gate-emitter withstand up to 20 V supports robust gate‑drive margins
• Collector-emitter saturation of 2.25 V reduces conduction losses
• Seven transistors provide multi-device switching within one package

Applications

• Suitable for industrial motor-drive inverter stages
• Used with high-voltage DC-DC conversion systems
• Ideal for power-factor correction and soft-switching stages
• Can be used for switched-mode power supplies in utilities
• Used for medium-frequency traction and industrial converters

What ambient temperatures can it reliably operate within?

It maintains operation from −40 °C up to 150 °C.

How does the module address hazardous-substance restrictions?

It is manufactured to meet RoHS compliance for restricted materials.

What are the external mounting space considerations?

The package measures 33.8 x 62.8 x 12 mm for footprint and height planning.

How many semiconductor switches are integrated in the package?

The construction includes seven individual transistors.

What conduction performance can be expected under load?

Expect a maximum collector-emitter saturation voltage of 2.25 V during conduction.