Infineon IGBT Module 1200 V
- RS-stocknr.:
- 244-5385
- Fabrikantnummer:
- FP15R12W1T4BOMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tray van 24 eenheden)*
€ 906,264
(excl. BTW)
€ 1.096,584
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 24 - 24 | € 37,761 | € 906,26 |
| 48 + | € 35,873 | € 860,95 |
*prijsindicatie
- RS-stocknr.:
- 244-5385
- Fabrikantnummer:
- FP15R12W1T4BOMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 130W | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 62.8mm | |
| Width | 33.8 mm | |
| Height | 12mm | |
| Series | FP15R12W1T4B | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 130W | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Length 62.8mm | ||
Width 33.8 mm | ||
Height 12mm | ||
Series FP15R12W1T4B | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The infineon IGBT module is suitable for auxiliary inverters, motor drives and air conditioning etc.
Electrical features
Low switching losses, low inductive design
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
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