Infineon FP15R12W1T4BOMA1 IGBT Module 1200 V

RS-stocknr.:: 244-5385
Fabrikantnummer:: FP15R12W1T4BOMA1
Fabrikant:: Infineon

Infineon FP15R12W1T4BOMA1 IGBT Module 1200 V

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Subtotaal (24 eenheden, op een tray van 24)*

€ 637,20

(excl. BTW)

€ 771,12

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 19 februari 2027

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Aantal stuks	Per stuk	Per tray*
24 - 24	€ 26,55	€ 637,20
48 +	€ 25,222	€ 605,33

*prijsindicatie

RS-stocknr.:: 244-5385
Fabrikantnummer:: FP15R12W1T4BOMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Number of Transistors	7
	Maximum Power Dissipation Pd	130W
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.25V
	Maximum Operating Temperature	150°C
	Height	12mm
	Standards/Approvals	RoHS
	Width	33.8mm
	Series	FP15R12W1T4B
	Length	62.8mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Number of Transistors 7
	Maximum Power Dissipation Pd 130W
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.25V
	Maximum Operating Temperature 150°C
	Height 12mm
	Standards/Approvals RoHS
	Width 33.8mm
	Series FP15R12W1T4B
	Length 62.8mm
	Automotive Standard No

Datasheet - FP15R12W1T4BOMA1

Infineon FP15R12W1T4B Series IGBT Module, 1200V Collector-Emitter Voltage, 130W Power Dissipation - FP15R12W1T4BOMA1

This IGBT module is a power semiconductor assembly designed to switch and control high-voltage DC loads in industrial power electronics. It delivers controlled switching capability for demanding thermal and electrical environments, operating across a wide temperature span and conforming to RoHS requirements.

Features and Benefits:

• Vceo rating of 1200 V affords high-voltage switching capability
• Power dissipation up to 130 W enables sustained thermal load handling
• Gate-emitter withstand up to 20 V supports robust gate‑drive margins
• Collector-emitter saturation of 2.25 V reduces conduction losses
• Seven transistors provide multi-device switching within one package

Applications

• Suitable for industrial motor-drive inverter stages
• Used with high-voltage DC-DC conversion systems
• Ideal for power-factor correction and soft-switching stages
• Can be used for switched-mode power supplies in utilities
• Used for medium-frequency traction and industrial converters

What ambient temperatures can it reliably operate within?

It maintains operation from −40 °C up to 150 °C.

How does the module address hazardous-substance restrictions?

It is manufactured to meet RoHS compliance for restricted materials.

What are the external mounting space considerations?

The package measures 33.8 x 62.8 x 12 mm for footprint and height planning.

How many semiconductor switches are integrated in the package?

The construction includes seven individual transistors.

What conduction performance can be expected under load?

Expect a maximum collector-emitter saturation voltage of 2.25 V during conduction.