Infineon FP100R12KT4BOSA1 IGBT Module 1200 V

RS-stocknr.:: 244-5380
Fabrikantnummer:: FP100R12KT4BOSA1
Fabrikant:: Infineon

Infineon FP100R12KT4BOSA1 IGBT Module 1200 V

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 eenheid)*

€ 151,14

(excl. BTW)

€ 182,88

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

Tijdelijk niet op voorraad

Verzending vanaf 08 april 2027

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk
1 - 1	€ 151,14
2 - 2	€ 148,12
3 +	€ 133,31

*prijsindicatie

RS-stocknr.:: 244-5380
Fabrikantnummer:: FP100R12KT4BOSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Number of Transistors	7
	Maximum Power Dissipation Pd	515W
	Maximum Gate Emitter Voltage VGEO	20 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	2.1V
	Maximum Operating Temperature	150°C
	Length	122mm
	Height	17mm
	Width	62mm
	Standards/Approvals	RoHS
	Series	FP100R12KT4
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Number of Transistors 7
	Maximum Power Dissipation Pd 515W
	Maximum Gate Emitter Voltage VGEO 20 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 2.1V
	Maximum Operating Temperature 150°C
	Length 122mm
	Height 17mm
	Width 62mm
	Standards/Approvals RoHS
	Series FP100R12KT4
	Automotive Standard No

Datasheet - FP100R12KT4BOSA1

Infineon FP100R12KT4 Series IGBT Module, 1200V Max Collector-Emitter Voltage, 515W Maximum Power Dissipation - FP100R12KT4BOSA1

This IGBT module is a high-voltage switching component designed for power-electronics applications requiring elevated voltage handling and thermal endurance. It is intended to manage significant power dissipation in industrial environments and operates across a wide temperature range, offering compatibility where automotive-grade alternatives are not required.

Features and Benefits:

• 1200 V blocking capability enabling high-voltage switching
• 515 W power dissipation capacity for heavy-duty loads
• VGE limit of 20 V for controlled gate-drive design
• VCE(sat) of 2.1 V reducing conduction losses under load
• Seven-transistor configuration providing dense switching topology
• 150 °C maximum junction rating for high-temperature operation

Applications

• Suitable for industrial motor-drive inverter stages
• Ideal for medium-voltage power converters and UPS systems
• Used with high-power switching arrays in renewable inverters
• Can be used for traction and heavy-equipment power modules

What gate-drive constraint should be observed?

The device requires gate-emitter voltages not exceeding 20 V to prevent gate damage.

How does thermal tolerance affect cooling design?

A maximum operating temperature of 150 °C permits smaller heatsink margins but still requires an adequate thermal Interface and cooling for continuous 515 W dissipation.

What electrical stress does the module withstand during blocking?

It is specified to withstand collector-emitter voltages up to 1200 V in off-state conditions.

How many switching elements are present internally?

The module contains seven transistors to support multi-switch topologies.

Are there any material restrictions for selection?

The unit conforms to RoHS requirements and therefore excludes certain restricted substances.