Infineon IGBT Module 1200 V
- RS-stocknr.:
- 244-5389
- Fabrikantnummer:
- FP25R12W2T4B11BOMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tray van 15 eenheden)*
€ 523,125
(excl. BTW)
€ 632,985
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 15 - 15 | € 34,875 | € 523,13 |
| 30 + | € 33,131 | € 496,97 |
*prijsindicatie
- RS-stocknr.:
- 244-5389
- Fabrikantnummer:
- FP25R12W2T4B11BOMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation Pd | 175W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.25V | |
| Maximum Operating Temperature | 150°C | |
| Width | 42.5 mm | |
| Length | 51mm | |
| Height | 12mm | |
| Standards/Approvals | RoHS | |
| Series | FP25R12W2T4B11B | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation Pd 175W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.25V | ||
Maximum Operating Temperature 150°C | ||
Width 42.5 mm | ||
Length 51mm | ||
Height 12mm | ||
Standards/Approvals RoHS | ||
Series FP25R12W2T4B11B | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 50 A and maximum collector-emitter saturation voltag 2.25 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF
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