Infineon FP25R12W2T4B11BOMA1 IGBT Module 1200 V

RS-stocknr.:: 244-5389
Fabrikantnummer:: FP25R12W2T4B11BOMA1
Fabrikant:: Infineon

Infineon FP25R12W2T4B11BOMA1 IGBT Module 1200 V

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Subtotaal (15 eenheden, op een tray van 15)*

€ 506,63

(excl. BTW)

€ 613,02

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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Verzending vanaf 19 februari 2027

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Aantal stuks	Per stuk	Per tray*
15 - 15	€ 33,775	€ 506,63
30 +	€ 32,085	€ 481,28

*prijsindicatie

RS-stocknr.:: 244-5389
Fabrikantnummer:: FP25R12W2T4B11BOMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Number of Transistors	7
	Maximum Power Dissipation Pd	175W
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.25V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Length	51mm
	Width	42.5mm
	Series	FP25R12W2T4B11B
	Standards/Approvals	RoHS
	Height	12mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Number of Transistors 7
	Maximum Power Dissipation Pd 175W
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.25V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Length 51mm
	Width 42.5mm
	Series FP25R12W2T4B11B
	Standards/Approvals RoHS
	Height 12mm
	Automotive Standard No

Datasheet - FP25R12W2T4B11BOMA1

Infineon FP25R12W2T4B11B Series IGBT Module, 175W Maximum Power Dissipation, 1200V Max Collector Emitter Voltage - FP25R12W2T4B11BOMA1

This IGBT module is a high-voltage power switching device designed for demanding industrial applications. It combines multiple transistors in a single package to manage high collector-emitter voltages and significant power dissipation while operating across a wide temperature range.

Features and Benefits:

• Handles 1200V collector-emitter voltage for high-voltage systems
• Manages 175W maximum power dissipation for sustained loads
• Operates to 150°C for high-temperature duty cycles
• Seven transistors in one module to simplify circuit design
• Low saturation voltage 2.25V to reduce conduction losses
• Gate-emitter rating 20V to accommodate common drive levels

Applications

• Suitable for industrial motor drives requiring high-voltage switching
• Ideal for power converters in renewable energy systems
• Used with inverter stages in large HVAC installations
• Can be used for traction auxiliary power systems
• Appropriate for high-temperature environments in heavy industry

What ambient range can it withstand?

It is specified to function down to −40°C and up to 150°C.

How does the gate-emitter limit affect driver selection?

Gate drivers must not exceed the 20V gate-emitter rating to avoid overstress.

What electrical characteristic reduces energy loss during conduction?

The module’s collector-emitter saturation voltage of 2.25V limits conduction losses.

How many switching elements are integrated in the package?

The module contains seven discrete transistors within a single enclosure.

Is the product suitable for environmentally restricted manufacturing?

It meets RoHS requirements and is therefore compliant with lead-free process constraints.