Infineon FP25R12W2T4B11BOMA1 IGBT Module, 39 A 1200 V
- RS-stocknr.:
- 244-5389
- Fabrikantnummer:
- FP25R12W2T4B11BOMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tray van 15 eenheden)*
€ 805,365
(excl. BTW)
€ 974,49
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Informatie over voorraden is momenteel niet toegankelijk
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 15 - 15 | € 53,691 | € 805,37 |
| 30 + | € 51,005 | € 765,08 |
*prijsindicatie
- RS-stocknr.:
- 244-5389
- Fabrikantnummer:
- FP25R12W2T4B11BOMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 39 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Maximum Power Dissipation | 175 W | |
| Number of Transistors | 7 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 39 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Maximum Power Dissipation 175 W | ||
Number of Transistors 7 | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 50 A and maximum collector-emitter saturation voltag 2.25 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF
Temperature under switching conditions 150° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.05 nF
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