Fabrikantnummer

Infineon IGBT Module 1200 V

RS-stocknr.:: 244-5392
Fabrikantnummer:: FP25R12W2T4BOMA1
Fabrikant:: Infineon

Bulkkorting beschikbaar

Subtotaal (1 tray van 15 eenheden)*

€ 494,505

(excl. BTW)

€ 598,35

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per tray*
15 - 15	€ 32,967	€ 494,51
30 +	€ 31,319	€ 469,79

*prijsindicatie

RS-stocknr.:: 244-5392
Fabrikantnummer:: FP25R12W2T4BOMA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	175W
	Number of Transistors	7
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.25V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Height	12mm
	Length	51mm
	Width	42.5 mm
	Standards/Approvals	RoHS
	Series	FP25R12W2T4B
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 175W
	Number of Transistors 7
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.25V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Height 12mm
	Length 51mm
	Width 42.5 mm
	Standards/Approvals RoHS
	Series FP25R12W2T4B
	Automotive Standard No

Datasheet - FP25R12W2T4BOMA1

The infineon IGBT module the maximum rated repetitive peak collector current is 50 A and maximum collector-emitter saturation voltag 2.25 V, gate threshold voltage is 6.4 V.

Collector-emitter cut-off current 1.0 mA

Temperature under switching conditions 150° C

Gate-emitter leakage current 400 nA

Reverse transfer capacitance 0.05 nF

Infineon IGBT Module 1200 V

Bulkkorting

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