Infineon IGBT, 80 A PG-TO-247, Surface
- RS-stocknr.:
- 258-1019
- Fabrikantnummer:
- IKW75N60H3FKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 135,18
(excl. BTW)
€ 163,56
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 4,506 | € 135,18 |
| 60 - 120 | € 4,281 | € 128,43 |
| 150 + | € 4,101 | € 123,03 |
*prijsindicatie
- RS-stocknr.:
- 258-1019
- Fabrikantnummer:
- IKW75N60H3FKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Power Dissipation Pd | 428W | |
| Package Type | PG-TO-247 | |
| Mount Type | Surface | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.21mm | |
| Standards/Approvals | RoHS | |
| Length | 16.13mm | |
| Series | IKW75 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Power Dissipation Pd 428W | ||
Package Type PG-TO-247 | ||
Mount Type Surface | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 5.21mm | ||
Standards/Approvals RoHS | ||
Length 16.13mm | ||
Series IKW75 | ||
Automotive Standard No | ||
The Infineon high speed 600 V, 75 A hard-switching TRENCHSTOP IGBT3 co-packed with free-wheeling diode in a TO-247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behaviour, leading to low turn off losses.
Low switching and conduction losses
Very good EMI behaviour
Can be used with a small gate resistor for reduced delay time and voltage overshoot
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