Fuji 2MBi300VH-120-50 Series IGBT Module, 360 A 1200 V, 7-Pin M276, Screw Mount
- RS-stocknr.:
- 747-1099
- Fabrikantnummer:
- 2MBi300VH-120-50
- Fabrikant:
- Fuji
Afbeelding representeert productcategorie
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 158,58
(excl. BTW)
€ 191,88
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 - 1 | € 158,58 |
| 2 - 4 | € 144,17 |
| 5 - 9 | € 132,16 |
| 10 + | € 121,98 |
*prijsindicatie
- RS-stocknr.:
- 747-1099
- Fabrikantnummer:
- 2MBi300VH-120-50
- Fabrikant:
- Fuji
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Fuji | |
| Maximum Continuous Collector Current | 360 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 1.6 kW | |
| Package Type | M276 | |
| Configuration | Series | |
| Mounting Type | Screw Mount | |
| Channel Type | N | |
| Pin Count | 7 | |
| Dimensions | 108 x 62 x 30.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Fuji | ||
Maximum Continuous Collector Current 360 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 1.6 kW | ||
Package Type M276 | ||
Configuration Series | ||
Mounting Type Screw Mount | ||
Channel Type N | ||
Pin Count 7 | ||
Dimensions 108 x 62 x 30.5mm | ||
Maximum Operating Temperature +150 °C | ||
IGBT Modules 2-Pack, Fuji Electric
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U/U4 Series, 5th Generation Field-Stop
S-Series, 4th Generation NPT
IGBT Discretes & Modules, Fuji Electric
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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