STMicroelectronics SCT025H120G3AG Type N, Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG
- RS-stocknr.:
- 214-951
- Fabrikantnummer:
- SCT025H120G3AG
- Fabrikant:
- STMicroelectronics
Subtotaal (1 rol van 1000 eenheden)*
€ 23.664,00
(excl. BTW)
€ 28.633,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 23,664 | € 23.664,00 |
*prijsindicatie
- RS-stocknr.:
- 214-951
- Fabrikantnummer:
- SCT025H120G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCT025H120G3AG | |
| Package Type | H2PAK-7 | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 375W | |
| Forward Voltage Vf | 2.7V | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.25mm | |
| Height | 4.8mm | |
| Width | 10.4 mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCT025H120G3AG | ||
Package Type H2PAK-7 | ||
Mount Type Surface, Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 375W | ||
Forward Voltage Vf 2.7V | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.25mm | ||
Height 4.8mm | ||
Width 10.4 mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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