Fabrikantnummer

STMicroelectronics SCT025H120G3AG N-Channel MOSFET, 55 A, 1.2 kV Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG

RS-stocknr.:: 214-951
Fabrikantnummer:: SCT025H120G3AG
Fabrikant:: STMicroelectronics

STMicroelectronics SCT025H120G3AG N-Channel MOSFET, 55 A, 1.2 kV Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG

Momenteel niet beschikbaar

Sorry, we weten niet wanneer dit weer voorradig zal zijn.

RS-stocknr.:: 214-951
Fabrikantnummer:: SCT025H120G3AG
Fabrikant:: STMicroelectronics

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	STMicroelectronics
	Series	SCT025H120G3AG
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current (Id)	55 A
	Maximum Drain Source Voltage (Vds)	1.2 kV
	Channel Mode	Enhancement
	Pin Count	7
	Package Type	H2PAK-7
	Automotive Standard	AEC-Q101
	Forward Voltage (Vf)	2.7 V
	Height	4.8 mm
	Length	15.25 mm
	Maximum Drain Source Resistance (Rds)	27 mΩ
	Maximum Gate Source Voltage (Vgs)	22 V
	Maximum Operating Temperature	175 °C
	Maximum Power Dissipation (Pd)	375 W
	Minimum Operating Temperature	-55 °C
	Mount Type	Surface
	Standards/Approvals	AEC-Q101, RoHS
	Typical Gate Charge (Qg) @ Vgs	73 nC
	Width	10.4 mm

	Alles selecteren
	Merk STMicroelectronics
	Series SCT025H120G3AG
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current (Id) 55 A
	Maximum Drain Source Voltage (Vds) 1.2 kV
	Channel Mode Enhancement
	Pin Count 7
	Package Type H2PAK-7
	Automotive Standard AEC-Q101
	Forward Voltage (Vf) 2.7 V
	Height 4.8 mm
	Length 15.25 mm
	Maximum Drain Source Resistance (Rds) 27 mΩ
	Maximum Gate Source Voltage (Vgs) 22 V
	Maximum Operating Temperature 175 °C
	Maximum Power Dissipation (Pd) 375 W
	Minimum Operating Temperature -55 °C
	Mount Type Surface
	Standards/Approvals AEC-Q101, RoHS
	Typical Gate Charge (Qg) @ Vgs 73 nC
	Width 10.4 mm

Datasheet - SCT025H120G3AG

Land van herkomst:: CN

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

Gerelateerde Links

Wees als eerste op de hoogte van onze nieuwste producten en aanbiedingen

E-mailadres

De persoonlijke gegevens die u aan ons verstrekt bij het aanmelden voor deze mailinglijst worden verwerkt in overeenstemming met ons privacybeleid.