STMicroelectronics SCTH40N Type N-Channel MOSFET, 33 A, 1200 V Enhancement, 7-Pin H2PAK SCTH40N120G2V-7

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Verpakkingsopties
RS-stocknr.:
219-4222
Fabrikantnummer:
SCTH40N120G2V-7
Fabrikant:
STMicroelectronics
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STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

1200V

Series

SCTH40N

Package Type

H2PAK

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

105mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

250W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

61nC

Maximum Gate Source Voltage Vgs

22 V

Maximum Operating Temperature

175°C

Height

15.25mm

Width

4.8 mm

Standards/Approvals

No

Length

10.4mm

Automotive Standard

No

The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

AEC-Q101 qualified

Very high operating junction temperature capability (TJ = 175 °C)

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

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