STMicroelectronics SCT025H120G3AG Type N-Channel MOSFET, 55 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT025H120G3AG

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RS-stocknr.:
214-952
Fabrikantnummer:
SCT025H120G3AG
Fabrikant:
STMicroelectronics
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STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-7

Series

SCT025H120G3AG

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

375W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

73nC

Forward Voltage Vf

2.7V

Maximum Operating Temperature

175°C

Standards/Approvals

AEC-Q101, RoHS

Height

4.8mm

Length

15.25mm

Width

10.4 mm

Automotive Standard

AEC-Q101

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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