STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 eenheid)*

€ 11,10

(excl. BTW)

€ 13,43

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks
Per stuk
1 - 9€ 11,10
10 - 99€ 9,98
100 +€ 9,22

*prijsindicatie

Verpakkingsopties
RS-stocknr.:
214-961
Fabrikantnummer:
SCT070H120G3-7
Fabrikant:
STMicroelectronics
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

1200V

Package Type

H2PAK-7

Series

SCT

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

63mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

37nC

Maximum Power Dissipation Pd

224W

Forward Voltage Vf

3V

Maximum Operating Temperature

175°C

Length

15.25mm

Standards/Approvals

RoHS

Land van herkomst:
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

Gerelateerde Links