STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7
- RS-stocknr.:
- 214-961
- Fabrikantnummer:
- SCT070H120G3-7
- Fabrikant:
- STMicroelectronics
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€ 11,10
(excl. BTW)
€ 13,43
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 11,10 |
| 10 - 99 | € 9,98 |
| 100 + | € 9,22 |
*prijsindicatie
- RS-stocknr.:
- 214-961
- Fabrikantnummer:
- SCT070H120G3-7
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-7 | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 63mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Typical Gate Charge Qg @ Vgs | 37nC | |
| Maximum Power Dissipation Pd | 224W | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.4 mm | |
| Length | 15.25mm | |
| Standards/Approvals | RoHS | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-7 | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 63mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Typical Gate Charge Qg @ Vgs 37nC | ||
Maximum Power Dissipation Pd 224W | ||
Maximum Operating Temperature 175°C | ||
Width 10.4 mm | ||
Length 15.25mm | ||
Standards/Approvals RoHS | ||
- Land van herkomst:
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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