Fabrikantnummer

STMicroelectronics SCT N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7

RS-stocknr.:: 214-961
Fabrikantnummer:: SCT070H120G3-7
Fabrikant:: STMicroelectronics

STMicroelectronics SCT N-Channel MOSFET, 30 A, 1200 V Enhancement, 7-Pin H2PAK-7 SCT070H120G3-7

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RS-stocknr.:: 214-961
Fabrikantnummer:: SCT070H120G3-7
Fabrikant:: STMicroelectronics

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	STMicroelectronics
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	30A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	H2PAK-7
	Series	SCT
	Mount Type	Surface
	Pin Count	7
	Maximum Drain Source Resistance Rds	63mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	37nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	224W
	Forward Voltage Vf	3V
	Maximum Gate Source Voltage Vgs	22V
	Maximum Operating Temperature	175°C
	Length	15.25mm
	Standards/Approvals	RoHS
	Width	10.4mm

	Alles selecteren
	Merk STMicroelectronics
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 30A
	Maximum Drain Source Voltage Vds 1200V
	Package Type H2PAK-7
	Series SCT
	Mount Type Surface
	Pin Count 7
	Maximum Drain Source Resistance Rds 63mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 37nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 224W
	Forward Voltage Vf 3V
	Maximum Gate Source Voltage Vgs 22V
	Maximum Operating Temperature 175°C
	Length 15.25mm
	Standards/Approvals RoHS
	Width 10.4mm

Datasheet - SCT070H120G3-7

Land van herkomst:: CN

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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