STMicroelectronics Sct N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3-7

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RS-stocknr.:
719-465
Fabrikantnummer:
SCT018H65G3-7
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Channel Type

N channel

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

55A

Maximum Drain Source Voltage Vds

650V

Package Type

H2PAK-7

Series

Sct

Mount Type

Through Hole

Pin Count

7

Maximum Drain Source Resistance Rds

20mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22 V

Forward Voltage Vf

2.6V

Typical Gate Charge Qg @ Vgs

79.4nC

Maximum Power Dissipation Pd

385W

Maximum Operating Temperature

175°C

Height

4.8mm

Length

15.25mm

Width

10.4 mm

Land van herkomst:
CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

Very fast and robust intrinsic body diode

Very low RDS(on) over the entire temperature range

High speed switching performances

Source sensing pin for increased efficiency

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