STMicroelectronics Sct N channel-Channel Power MOSFET, 55 A, 650 V Enhancement, 7-Pin H2PAK-7 SCT018H65G3-7
- RS-stocknr.:
- 719-465
- Fabrikantnummer:
- SCT018H65G3-7
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
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€ 16,75
(excl. BTW)
€ 20,27
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 16,75 |
| 10 - 49 | € 15,34 |
| 50 - 99 | € 14,32 |
| 100 + | € 13,32 |
*prijsindicatie
- RS-stocknr.:
- 719-465
- Fabrikantnummer:
- SCT018H65G3-7
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | H2PAK-7 | |
| Series | Sct | |
| Mount Type | Through Hole | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 385W | |
| Typical Gate Charge Qg @ Vgs | 79.4nC | |
| Forward Voltage Vf | 2.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.8mm | |
| Length | 15.25mm | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type H2PAK-7 | ||
Series Sct | ||
Mount Type Through Hole | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 385W | ||
Typical Gate Charge Qg @ Vgs 79.4nC | ||
Forward Voltage Vf 2.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.8mm | ||
Length 15.25mm | ||
- Land van herkomst:
- CN
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
Very fast and robust intrinsic body diode
Very low RDS(on) over the entire temperature range
High speed switching performances
Source sensing pin for increased efficiency
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