ROHM HT8K 2 Type N-Channel MOSFET, 7 A, 100 V Enhancement, 8-Pin HSMT-8 HT8KE5TB1
- RS-stocknr.:
- 264-874
- Fabrikantnummer:
- HT8KE5TB1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 5,22
(excl. BTW)
€ 6,32
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 100 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,522 | € 5,22 |
| 100 - 240 | € 0,496 | € 4,96 |
| 250 - 490 | € 0,458 | € 4,58 |
| 500 - 990 | € 0,422 | € 4,22 |
| 1000 + | € 0,407 | € 4,07 |
*prijsindicatie
- RS-stocknr.:
- 264-874
- Fabrikantnummer:
- HT8KE5TB1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | HT8K | |
| Package Type | HSMT-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 193mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 13W | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series HT8K | ||
Package Type HSMT-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 193mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 13W | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM power MOSFET features a dual N-channel configuration with a voltage rating of 100V and a current capacity of 7A. Designed in an HSOP8 package and offers low on-resistance.
Low on-resistance
Small Surface Mount Package (HSOP8)
Pb-free lead plating and RoHS compliant
Halogen Free
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