ROHM RQ3 Type N-Channel MOSFET, 12 A, 60 V Enhancement, 8-Pin HSMT-8 RQ3L120BKFRATCB
- RS-stocknr.:
- 265-253
- Fabrikantnummer:
- RQ3L120BKFRATCB
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 5,98
(excl. BTW)
€ 7,24
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 100 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,598 | € 5,98 |
| 100 - 240 | € 0,569 | € 5,69 |
| 250 - 490 | € 0,527 | € 5,27 |
| 500 - 990 | € 0,485 | € 4,85 |
| 1000 + | € 0,467 | € 4,67 |
*prijsindicatie
- RS-stocknr.:
- 265-253
- Fabrikantnummer:
- RQ3L120BKFRATCB
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RQ3 | |
| Package Type | HSMT-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 40W | |
| Typical Gate Charge Qg @ Vgs | 7.3nC | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RQ3 | ||
Package Type HSMT-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 40W | ||
Typical Gate Charge Qg @ Vgs 7.3nC | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The ROHM Automotive grade MOSFET is an ideal solution for Advanced Driver Assistance Systems, infotainment, lighting and body applications. Its robust construction ensures reliable operation in demanding automotive environments. Realization of high mounting reliability by original terminal and plating treatment.
RoHS compliant
AEC Q101 Qualified
Small high powered package
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