ROHM RQ3 Type N-Channel MOSFET, 27 A, 100 V Enhancement, 8-Pin HSMT-8 RQ3P270BKFRATCB
- RS-stocknr.:
- 265-255
- Fabrikantnummer:
- RQ3P270BKFRATCB
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 8,16
(excl. BTW)
€ 9,87
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 100 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,816 | € 8,16 |
| 100 - 240 | € 0,775 | € 7,75 |
| 250 - 490 | € 0,718 | € 7,18 |
| 500 - 990 | € 0,661 | € 6,61 |
| 1000 + | € 0,636 | € 6,36 |
*prijsindicatie
- RS-stocknr.:
- 265-255
- Fabrikantnummer:
- RQ3P270BKFRATCB
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSMT-8 | |
| Series | RQ3 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 27.0mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 69W | |
| Typical Gate Charge Qg @ Vgs | 13.6nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSMT-8 | ||
Series RQ3 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 27.0mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 69W | ||
Typical Gate Charge Qg @ Vgs 13.6nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The ROHM Automotive grade MOSFET is an ideal solution for Advanced Driver Assistance Systems, infotainment, lighting and body applications. Its robust construction ensures reliable operation in demanding automotive environments. Realization of high mounting reliability by original terminal and plating treatment.
RoHS compliant
AEC Q101 Qualified
Small high powered package
Gerelateerde Links
- ROHM RQ3 P-Channel MOSFET 40 V, 8-Pin HSMT-8 RQ3G270BJFRATCB
- ROHM RQ3 N-Channel MOSFET 60 V, 8-Pin HSMT-8 RQ3L120BKFRATCB
- ROHM RQ3 P-Channel MOSFET 60 V, 8-Pin HSMT-8 RQ3L120BJFRATCB
- ROHM RQ3 P-Channel MOSFET 40 V, 8-Pin HSMT-8 RQ3G120BJFRATCB
- ROHM N-Channel MOSFET 100 V, 8-Pin HSMT RQ3P300BHTB1
- ROHM R65 N-Channel MOSFET 30 V, 8-Pin HSMT-8 RH6E040BGTB1
- ROHM RQ3L050GN N-Channel MOSFET 60 V, 8-Pin HSMT RQ3L050GNTB
- ROHM RQ3G100GN N-Channel MOSFET 40 V, 8-Pin HSMT RQ3G100GNTB
