ROHM R65 1 N-Channel MOSFET, 125 A, 30 V Enhancement, 8-Pin HSMT-8 RH6E040BGTB1
- RS-stocknr.:
- 265-310
- Fabrikantnummer:
- RH6E040BGTB1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 10 eenheden)*
€ 8,55
(excl. BTW)
€ 10,35
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 90 stuk(s) vanaf 08 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,855 | € 8,55 |
| 100 - 240 | € 0,812 | € 8,12 |
| 250 - 490 | € 0,752 | € 7,52 |
| 500 - 990 | € 0,694 | € 6,94 |
| 1000 + | € 0,667 | € 6,67 |
*prijsindicatie
- RS-stocknr.:
- 265-310
- Fabrikantnummer:
- RH6E040BGTB1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 125A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | HSMT-8 | |
| Series | R65 | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 30.0nC | |
| Maximum Power Dissipation Pd | 78W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Number of Elements per Chip | 1 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 125A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type HSMT-8 | ||
Series R65 | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 30.0nC | ||
Maximum Power Dissipation Pd 78W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Number of Elements per Chip 1 | ||
The ROHM Power MOSFET features low on resistance and is housed in a compact, high power small mould package. It is well suited for a variety of applications, including switching, motor drives, and DC/DC converters, delivering efficient performance in space-constrained environments.
Pb free plating
RoHS compliant
High power small mould package
Low on resistance
100 percent Rg and UIS tested
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