Infineon OptiMOS SiC N-Channel MOSFET, 85 A, 100 V, 9-Pin PG-WHTFN-9 IQE065N10NM5CGSCATMA1

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RS-stocknr.:
284-776
Fabrikantnummer:
IQE065N10NM5CGSCATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

85 A

Maximum Drain Source Voltage

100 V

Package Type

PG-WHTFN-9

Series

OptiMOS

Mounting Type

Surface Mount

Pin Count

9

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered for exceptional performance in synchronous rectification applications, delivering high efficiency and reliability. The advanced MOSFET technology makes it an ideal choice for demanding power supply designs, ensuring optimal thermal management and reduced energy loss. Designed to operate at 100V, this transistor exhibits impressive robustness through 100% avalanche testing, offering peace of mind for industrial applications.

Optimised for switch mode power supplies
N channel for enhanced switching
Superior thermal resistance ensures reliability
Pb free lead plating for environmental safety
Halogen free materials meet IEC standards

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