onsemi NVH Type N-Channel MOSFET, 70 A, 650 V N, 3-Pin TO-247-4L NVHL023N065M3S
- RS-stocknr.:
- 327-810
- Fabrikantnummer:
- NVHL023N065M3S
- Fabrikant:
- onsemi
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€ 13,13
(excl. BTW)
€ 15,89
(incl. BTW)
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- Plus verzending 450 stuk(s) vanaf 05 januari 2026
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|---|---|
| 1 - 9 | € 13,13 |
| 10 - 99 | € 11,82 |
| 100 + | € 10,88 |
*prijsindicatie
- RS-stocknr.:
- 327-810
- Fabrikantnummer:
- NVHL023N065M3S
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 70A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-247-4L | |
| Series | NVH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33mΩ | |
| Channel Mode | N | |
| Forward Voltage Vf | 4.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 263W | |
| Typical Gate Charge Qg @ Vgs | 69nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | Pb-Free, Halide Free and RoHS with Exemption 7a | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 70A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-247-4L | ||
Series NVH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33mΩ | ||
Channel Mode N | ||
Forward Voltage Vf 4.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 263W | ||
Typical Gate Charge Qg @ Vgs 69nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals Pb-Free, Halide Free and RoHS with Exemption 7a | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The ON Semiconductor Silicon Carbide (SiC) MOSFET, EliteSiC, is a 650 V, 23 mΩ device in the M3S TO-247-3L package. It is designed for high-performance power applications, offering low on-resistance and superior switching characteristics, making it ideal for use in demanding power electronics applications, including industrial and automotive systems.
Devices are Pb Free and are RoHS Compliant
Qualified for Automotive According to AEC Q101
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