Infineon IPT Type N-Channel Power Transistor, 212 A, 135 V Enhancement, 8-Pin PG-HSOG-8 IPTG029N13NM6ATMA1

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€ 7,36

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€ 8,91

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RS-stocknr.:
349-137
Fabrikantnummer:
IPTG029N13NM6ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

Power Transistor

Maximum Continuous Drain Current Id

212A

Maximum Drain Source Voltage Vds

135V

Package Type

PG-HSOG-8

Series

IPT

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.9mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

294W

Typical Gate Charge Qg @ Vgs

104nC

Maximum Operating Temperature

175°C

Standards/Approvals

J-STD-020, RoHS, IEC61249-2-21

Automotive Standard

No

Land van herkomst:
MY
The Infineon OptiMOS 6 Power Transistor, 135 V is an N-channel, normal level MOSFET designed to deliver high efficiency performance in power applications. It features very low on-resistance (RDS(on)), which minimizes conduction losses for greater energy efficiency. With an excellent gate charge x RDS(on) product (FOM), it ensures optimal switching performance. The MOSFET also offers very low reverse recovery charge (Qrr), improving switching efficiency. Additionally, it is 100% avalanche tested for reliability and can operate at 175°C, making it suitable for high temperature and demanding environments.

Optimized for motor drives and battery powered applications

Pb free lead plating

RoHS compliant

Halogen free according to IEC61249-2-21

MSL 1 classified according to J-STD-020

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