Infineon IPT Type N-Channel Power Transistor, 331 A, 120 V Enhancement, 8-Pin PG-HSOG-8 IPTG017N12NM6ATMA1
- RS-stocknr.:
- 349-135
- Fabrikantnummer:
- IPTG017N12NM6ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 12,54
(excl. BTW)
€ 15,18
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 6,27 | € 12,54 |
| 20 - 198 | € 5,645 | € 11,29 |
| 200 + | € 5,20 | € 10,40 |
*prijsindicatie
- RS-stocknr.:
- 349-135
- Fabrikantnummer:
- IPTG017N12NM6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 331A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Package Type | PG-HSOG-8 | |
| Series | IPT | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 395W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 113nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, MSL1 J-STD-020, IEC61249-2-21 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 331A | ||
Maximum Drain Source Voltage Vds 120V | ||
Package Type PG-HSOG-8 | ||
Series IPT | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 395W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 113nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, MSL1 J-STD-020, IEC61249-2-21 | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon OptiMOS 6 Power Transistor, 120 V is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), ensuring minimal conduction losses for improved performance. With an excellent gate charge x RDS(on) product (FOM), it enables superior switching characteristics. The MOSFET also has very low reverse recovery charge (Qrr), contributing to reduced switching losses. Its high avalanche energy rating ensures robustness under stress, and it operates reliably at a 175°C temperature, making it suitable for demanding and high temperature environments.
Optimized for high frequency switching and synchronous rectification
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
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