Infineon ISC Type N-Channel Power Transistor, 172 A, 135 V Enhancement, 8-Pin PG-TSON-8 ISC037N13NM6ATMA1
- RS-stocknr.:
- 349-142
- Fabrikantnummer:
- ISC037N13NM6ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 9,62
(excl. BTW)
€ 11,64
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 25 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 4,81 | € 9,62 |
| 20 - 198 | € 4,325 | € 8,65 |
| 200 - 998 | € 3,99 | € 7,98 |
| 1000 - 1998 | € 3,705 | € 7,41 |
| 2000 + | € 3,315 | € 6,63 |
*prijsindicatie
- RS-stocknr.:
- 349-142
- Fabrikantnummer:
- ISC037N13NM6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 172A | |
| Maximum Drain Source Voltage Vds | 135V | |
| Series | ISC | |
| Package Type | PG-TSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.7mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 250W | |
| Typical Gate Charge Qg @ Vgs | 82nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, JEDEC, IEC61249-2-21 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 172A | ||
Maximum Drain Source Voltage Vds 135V | ||
Series ISC | ||
Package Type PG-TSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.7mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 250W | ||
Typical Gate Charge Qg @ Vgs 82nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, JEDEC, IEC61249-2-21 | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which minimizes conduction losses and enhances overall efficiency. The transistor also offers an excellent gate charge x RDS(on) product (FOM), ensuring optimal switching performance. With very low reverse recovery charge (Qrr), it reduces switching losses, making it suitable for fast-switching applications. Additionally, the device is 100% avalanche tested, ensuring reliability and robustness under stress conditions.
175°C operating temperature
Optimized for motor drives and battery powered applications
Pb free lead plating and RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
Gerelateerde Links
- Infineon ISC N-Channel MOSFET 135 V, 8-Pin PG-TDSON-8 ISC046N13NM6ATMA1
- Infineon ISC N-Channel MOSFET 200 V, 8-Pin PG-TDSON-8 ISC151N20NM6ATMA1
- Infineon ISC N-Channel MOSFET 40 V, 8-Pin PG-TDSON-8 ISCH42N04LM7ATMA1
- Infineon ISC N-Channel MOSFET 120 V, 8-Pin PG-TDSON-8 ISC110N12NM6ATMA1
- Infineon ISC N-Channel MOSFET 200 V, 8-Pin PG-TDSON-8 ISC130N20NM6ATMA1
- Infineon ISC N-Channel MOSFET 120 V, 8-Pin PG-TDSON-8 ISC078N12NM6ATMA1
- Infineon ISC N-Channel MOSFET 100 V, 8-Pin PG-TDSON-8 ISC035N10NM5LF2ATMA1
- Infineon ISC N-Channel MOSFET 120 V, 8-Pin PG-TDSON-8 ISC032N12LM6ATMA1