Infineon IPT0 N-Channel MOSFET, 243 A, 100 V Enhancement, 8-Pin PG-HSOF-8 IPT023N10NM5LF2ATMA1
- RS-stocknr.:
- 351-908
- Fabrikantnummer:
- IPT023N10NM5LF2ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (2 eenheden, in een pakket van 2)*
€ 15,42
(excl. BTW)
€ 18,66
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 1.988 stuk(s) vanaf 08 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 7,71 | € 15,42 |
| 20 - 198 | € 6,95 | € 13,90 |
| 200 - 998 | € 6,41 | € 12,82 |
| 1000 - 1998 | € 5,935 | € 11,87 |
| 2000 + | € 5,32 | € 10,64 |
*prijsindicatie
- RS-stocknr.:
- 351-908
- Fabrikantnummer:
- IPT023N10NM5LF2ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 243A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PG-HSOF-8 | |
| Series | IPT0 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 2.3mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 144nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.4mm | |
| Length | 10.58mm | |
| Width | 10.1mm | |
| Standards/Approvals | RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 243A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PG-HSOF-8 | ||
Series IPT0 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 2.3mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 144nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Height 2.4mm | ||
Length 10.58mm | ||
Width 10.1mm | ||
Standards/Approvals RoHS, Halogen-Free According to IEC61249-2-21, JEDEC Qualified | ||
Automotive Standard No | ||
- Land van herkomst:
- AT
The Infineon OptiMOS 5 Linear FET 2 technology enables the best-in-class trade-off between on-state resistance and linear mode capability. Combined with the TOLL package, IPT023N10NM5LF2 is targeted for inrush current protection such as hot-swap, e-fuse, and battery protection in battery management systems (BMS).
Wide safe operating area (SOA)
Low RDS(on)
Lower IGSS compared to Linear FET
Optimized transfer characteristic
Gerelateerde Links
- Infineon IPT0 N-Channel MOSFET 100 V Enhancement, 8-Pin PG-HSOF-8 IPT017N10NM5LF2ATMA1
- Infineon IPT N-Channel MOSFET 600 V Enhancement, 8-Pin PG-HSOF-8 IPT60T065S7XTMA1
- Infineon IPT N-Channel MOSFET 60 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IPT N-Channel MOSFET 80 V Enhancement, 8-Pin PG-HSOF-8
- Infineon IGT65 N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R140D2ATMA1
- Infineon IGT65 N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R045D2ATMA1
- Infineon IGT65 N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R055D2ATMA1
- Infineon IGT65 N-Channel MOSFET 650 V Enhancement, 8-Pin PG-HSOF-8 IGT65R025D2ATMA1