Microchip Independent N Channel and P Channel Mosfet TC2320 1 P-Channel, N channel-Channel MOSFET Arrays, 2.1 A

Bekijk alle MOSFETs

Subtotaal (1 rol van 3300 eenheden)*

€ 8.101,50

(excl. BTW)

€ 9.804,30

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Tijdelijk niet op voorraad
  • Verzending vanaf 06 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per rol*
3300 +€ 2,455€ 8.101,50

*prijsindicatie

RS-stocknr.:
598-027
Fabrikantnummer:
TC2320TG-G
Fabrikant:
Microchip
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Microchip

Channel Type

P-Channel, N channel

Product Type

MOSFET Arrays

Maximum Continuous Drain Current Id

2.1A

Package Type

SOIC

Series

TC2320

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

12Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.8V

Transistor Configuration

Independent N Channel and P Channel Mosfet

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Certificate of Compliance

Number of Elements per Chip

1

Automotive Standard

No

The Microchip High-voltage, low-threshold N-channel and P-channel MOSFET in an 8-lead SOIC package is an enhancement-mode (normally-off) transistor that utilizes an advanced vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination provides the power handling capabilities of bipolar transistors while maintaining high input impedance and a positive temperature coefficient, typical of MOS devices. As with all MOS structures, the device is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance.

Low threshold

Low on resistance

Low input capacitance

Fast switching speeds

Free from secondary breakdown

Gerelateerde Links