Microchip Two Pairs of N and P Channel TC8220 1 P-Channel, N channel-Channel MOSFET Arrays, 2.3 A, 200 V Enhancement,

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€ 12.853,50

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RS-stocknr.:
598-776
Fabrikantnummer:
TC8220K6-G
Fabrikant:
Microchip
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Merk

Microchip

Channel Type

P-Channel, N channel

Product Type

MOSFET Arrays

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

200V

Package Type

DFN

Series

TC8220

Mount Type

Surface

Pin Count

12

Maximum Drain Source Resistance Rds

8.5Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±25 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Transistor Configuration

Two Pairs of N and P Channel

Length

4mm

Standards/Approvals

RoHS Certificate of Compliance

Height

1mm

Width

4 mm

Number of Elements per Chip

1

Automotive Standard

No

Land van herkomst:
CN
The Microchip High-voltage, low-threshold N-channel and P-channel MOSFETs in a 12-lead DFN package feature integrated gate-to-source resistors and gate-to-source Zener diode clamps, ideal for high-voltage pulser applications. These complementary, high-speed, high-voltage, gate-clamped N-channel and P-channel MOSFET pairs utilize an advanced vertical DMOS structure along with Supertex’s proven silicon-gate manufacturing process. This combination offers the power handling capabilities of bipolar transistors, while also providing the high input impedance and positive temperature coefficient typical of MOS devices.

Integrated gate to source resistor

Integrated gate to source Zener diode

Low threshold, low on-resistance

Low input and output capacitance

Fast switching speeds

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