Microchip Electrically Isolated N Channel and P Channel Pairs (2 Pairs) TC7920 1 N channel, P-Channel MOSFET Arrays, 1.8

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RS-stocknr.:
598-568
Fabrikantnummer:
TC7920K6-G
Fabrikant:
Microchip
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Merk

Microchip

Channel Type

N channel, P-Channel

Product Type

MOSFET Arrays

Maximum Continuous Drain Current Id

1.8A

Maximum Drain Source Voltage Vds

200V

Series

TC7920

Package Type

DFN

Mount Type

Surface

Pin Count

12

Maximum Drain Source Resistance Rds

12Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Forward Voltage Vf

1.8V

Transistor Configuration

Electrically Isolated N Channel and P Channel Pairs (2 Pairs)

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Certificate of Compliance

Width

4.15 mm

Height

1mm

Number of Elements per Chip

1

Automotive Standard

No

Land van herkomst:
CN
The Microchip High voltage, low-threshold N-channel and P-channel MOSFETs in a 12-lead DFN package feature integrated output drain high-voltage diodes, gate-to-source resistors, and gate-to-source Zener diode clamps, making them ideal for high-voltage pulser applications. These complementary, high-speed, high-voltage, gate-clamped MOSFET pairs use an advanced vertical DMOS structure and a proven silicon-gate manufacturing process. This combination delivers the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices.

Integrated gate to source resistor

Integrated gate to source Zener diode

Low threshold, low on-resistance

Low input and output capacitance

Fast switching speeds

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