Microchip Electrically Isolated N Channel and P Channel Pairs (2 Pairs) TC7920 1 N channel, P-Channel MOSFET Arrays, 1.8
- RS-stocknr.:
- 598-568
- Fabrikantnummer:
- TC7920K6-G
- Fabrikant:
- Microchip
Subtotaal (1 rol van 3300 eenheden)*
€ 7.665,90
(excl. BTW)
€ 9.276,30
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 20 juli 2026
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3300 + | € 2,323 | € 7.665,90 |
*prijsindicatie
- RS-stocknr.:
- 598-568
- Fabrikantnummer:
- TC7920K6-G
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Product Type | MOSFET Arrays | |
| Channel Type | N channel, P-Channel | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | DFN | |
| Series | TC7920 | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Electrically Isolated N Channel and P Channel Pairs (2 Pairs) | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Height | 1mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Product Type MOSFET Arrays | ||
Channel Type N channel, P-Channel | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type DFN | ||
Series TC7920 | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Electrically Isolated N Channel and P Channel Pairs (2 Pairs) | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Height 1mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Microchip High voltage, low-threshold N-channel and P-channel MOSFETs in a 12-lead DFN package feature integrated output drain high-voltage diodes, gate-to-source resistors, and gate-to-source Zener diode clamps, making them ideal for high-voltage pulser applications. These complementary, high-speed, high-voltage, gate-clamped MOSFET pairs use an advanced vertical DMOS structure and a proven silicon-gate manufacturing process. This combination delivers the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices.
Integrated gate to source resistor
Integrated gate to source Zener diode
Low threshold, low on-resistance
Low input and output capacitance
Fast switching speeds
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