ROHM RD3L08DBLHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBLHRBTL
- RS-stocknr.:
- 687-458
- Fabrikantnummer:
- RD3L08DBLHRBTL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 2 eenheden)*
€ 4,20
(excl. BTW)
€ 5,08
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 21 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2 - 18 | € 2,10 | € 4,20 |
| 20 - 48 | € 1,855 | € 3,71 |
| 50 - 198 | € 1,67 | € 3,34 |
| 200 - 998 | € 1,345 | € 2,69 |
| 1000 + | € 1,30 | € 2,60 |
*prijsindicatie
- RS-stocknr.:
- 687-458
- Fabrikantnummer:
- RD3L08DBLHRBTL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RD3L08DBLHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Power Dissipation Pd | 76W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Width | 6.8 mm | |
| Height | 2.3mm | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RD3L08DBLHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Power Dissipation Pd 76W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Width 6.8 mm | ||
Height 2.3mm | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- JP
The ROHM Power MOSFET is engineered for demanding applications requiring high efficiency and robust performance. This 60V, 80A N channel MOSFET features ultra-low on-resistance, delivering superior electrical performance while ensuring reliability. It is designed to operate optimally in various environments, making it ideal for automotive applications, including advanced driver assistance systems (ADAS) and lighting. With compliance to AEC-Q101 and 100% avalanche testing, this component ensures high standards of safety and efficiency in any electronic design. Its compact packaging enables easy integration into space-constrained layouts.
Delivers low on resistance of 7.6mΩ, enhancing efficiency in power transfer
Rated for a maximum continuous drain current of 80A, ensuring reliability under significant loads
Features a wide drain-source voltage of 60V suitable for various high-voltage applications
All products are RoHS compliant, supporting environmentally friendly designs
100% avalanche tested for increased reliability and component longevity
Designed in a DPAK TO-252 package for easy mounting in compact circuits
Offers a broad operating temperature range from -55°C to 175°C, ensuring performance in extreme conditions
Qualified to AEC Q101 , making it ideal for automotive and high-reliability applications
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