ROHM RD3L08CBLHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08CBLHRBTL
- RS-stocknr.:
- 687-440
- Fabrikantnummer:
- RD3L08CBLHRBTL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 2 eenheden)*
€ 2,46
(excl. BTW)
€ 2,98
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 20 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2 - 18 | € 1,23 | € 2,46 |
| 20 - 48 | € 1,085 | € 2,17 |
| 50 - 198 | € 0,97 | € 1,94 |
| 200 - 998 | € 0,785 | € 1,57 |
| 1000 + | € 0,77 | € 1,54 |
*prijsindicatie
- RS-stocknr.:
- 687-440
- Fabrikantnummer:
- RD3L08CBLHRBTL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 (TL) | |
| Series | RD3L08CBLHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 96W | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Length | 10.50mm | |
| Width | 6.8 mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 (TL) | ||
Series RD3L08CBLHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 96W | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Length 10.50mm | ||
Width 6.8 mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The ROHM N channel power MOSFET designed for demanding applications, offering excellent efficiency and reliability. With a maximum drain-source voltage of 60V and a continuous drain current of 80A, this device is ideal for switching and amplification tasks in automotive and consumer electronics. Its low on-resistance of just 5.3mΩ maximises power efficiency, while its robust construction ensures it withstands harsh operational environments, meeting AEC-Q101 qualifications and providing 100% avalanche testing for enhanced safety. This MOSFET represents a powerful solution for advanced circuitry, blending performance with stringent compliance standards.
Low on resistance of 5.3mΩ significantly improves energy efficiency
Supports up to 80A continuous drain current for robust performance in demanding applications
100% avalanche tested to ensure stability and reliability during operation
AEC Q101 qualified, making it suitable for automotive applications
Wide operating junction temperature range from -55°C to +175°C ensures reliable performance in various conditions
Integrated thermal resistance of junction-case optimises power handling capabilities
Pb free and RoHS compliant, aligning with modern environmental standards.
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