ROHM RD3L08DBKHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBKHRBTL

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  • Verzending vanaf 20 januari 2026
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Verpakkingsopties
RS-stocknr.:
687-465
Fabrikantnummer:
RD3L08DBKHRBTL
Fabrikant:
ROHM
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Merk

ROHM

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

60V

Package Type

TO-252 (TL)

Series

RD3L08DBKHRB

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

76W

Maximum Gate Source Voltage Vgs

±20 V

Typical Gate Charge Qg @ Vgs

22nC

Maximum Operating Temperature

175°C

Length

10.50mm

Width

6.8 mm

Height

2.3mm

Standards/Approvals

AEC-Q101, RoHS

Automotive Standard

AEC-Q101

Land van herkomst:
JP
The ROHM Power MOSFET is engineered for high-performance in demanding applications, offering reliable switching capabilities with low on-resistance and a robust breakdown voltage. Designed to handle up to 80A of continuous drain current and with a maximum drain-source voltage of 60V, this component ensures efficiency and durability. It is ideal for automotive electronics, lighting, and other power management systems, featuring Pb-free plating and is AEC-Q101 qualified, making it compliant with the latest industry standards. This MOSFET provides a combination of exceptional thermal performance and reliability, making it a suitable choice for engineers seeking to optimise their circuit designs.

Low on resistance of 7.5mΩ maximises power efficiency

AEC Q101 qualification ensures high reliability in automotive applications

Passes 100% avalanche testing for enhanced durability

Capable of handling continuous drain current up to 80A

Maximum drain-source voltage rating of 60V provides substantial overhead

Pb free plating adheres to RoHS compliance, promoting environmental responsibility

Versatile packaging ensures compatibility across various application designs

Ideal for use in ADAS, info systems, and body control applications

Features low gate charge characteristics for faster switching times

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