ROHM RD3L08DBKHRB N-Channel Single MOSFETs, 80 A, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBKHRBTL
- RS-stocknr.:
- 687-465
- Fabrikantnummer:
- RD3L08DBKHRBTL
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 2 eenheden)*
€ 1,96
(excl. BTW)
€ 2,38
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending vanaf 04 maart 2027
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2 - 18 | € 0,98 | € 1,96 |
| 20 - 48 | € 0,865 | € 1,73 |
| 50 - 198 | € 0,775 | € 1,55 |
| 200 - 998 | € 0,625 | € 1,25 |
| 1000 + | € 0,61 | € 1,22 |
*prijsindicatie
- RS-stocknr.:
- 687-465
- Fabrikantnummer:
- RD3L08DBKHRBTL
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | RD3L08DBKHRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 76W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.5mm | |
| Width | 6.8mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Height | 2.3mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type Single MOSFETs | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series RD3L08DBKHRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 76W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Length 10.5mm | ||
Width 6.8mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Height 2.3mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- JP
The ROHM Power MOSFET is engineered for high-performance in demanding applications, offering reliable switching capabilities with low on-resistance and a robust breakdown voltage. Designed to handle up to 80A of continuous drain current and with a maximum drain-source voltage of 60V, this component ensures efficiency and durability. It is ideal for automotive electronics, lighting, and other power management systems, featuring Pb-free plating and is AEC-Q101 qualified, making it compliant with the latest industry standards. This MOSFET provides a combination of exceptional thermal performance and reliability, making it a suitable choice for engineers seeking to optimise their circuit designs.
Low on resistance of 7.5mΩ maximises power efficiency
AEC Q101 qualification ensures high reliability in automotive applications
Passes 100% avalanche testing for enhanced durability
Capable of handling continuous drain current up to 80A
Maximum drain-source voltage rating of 60V provides substantial overhead
Pb free plating adheres to RoHS compliance, promoting environmental responsibility
Versatile packaging ensures compatibility across various application designs
Ideal for use in ADAS, info systems, and body control applications
Features low gate charge characteristics for faster switching times
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