ROHM HT8KE6 2 Type N-Channel MOSFET Arrays, 12.5 A, 100 V Enhancement, 8-Pin HSMT-8 HT8KE6HTB1
- RS-stocknr.:
- 646-615
- Fabrikantnummer:
- HT8KE6HTB1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 7,81
(excl. BTW)
€ 9,45
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 09 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,781 | € 7,81 |
| 100 - 490 | € 0,688 | € 6,88 |
| 500 - 990 | € 0,617 | € 6,17 |
| 1000 + | € 0,488 | € 4,88 |
*prijsindicatie
- RS-stocknr.:
- 646-615
- Fabrikantnummer:
- HT8KE6HTB1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET Arrays | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | HSMT-8 | |
| Series | HT8KE6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 14W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 6.3nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, Halogen Free, Pb Free | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET Arrays | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type HSMT-8 | ||
Series HT8KE6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 14W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 6.3nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, Halogen Free, Pb Free | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The ROHM Power MOSFET with low on resistance and High power small mould package suitable for Switching and Motor drives applications.
Pb free plating
RoHS compliant
Halogen Free
100% Rg and UIS tested
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