Vishay EF Type N-Channel Single MOSFETs, 38 A, 600 V Enhancement, 8-Pin PowerPAK SIHR100N60EF-T1GE3

Subtotaal (1 rol van 3000 eenheden)*

€ 12.504,00

(excl. BTW)

€ 15.129,00

(incl. BTW)

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3000 +€ 4,168€ 12.504,00

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RS-stocknr.:
653-077
Fabrikantnummer:
SIHR100N60EF-T1GE3
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

Type N

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

38A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK

Series

EF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.108Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

35nC

Maximum Power Dissipation Pd

347W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

8 mm

Automotive Standard

No

Land van herkomst:
CN
The Vishay 4th generation E Series Power MOSFET equipped with a fast body diode for enhanced switching efficiency. It offers a low figure of merit (FOM), reduced effective capacitance, and minimized switching and conduction losses. Packaged in PowerPAK 8x8LR, it's Ideal for server, telecom, lighting, industrial, and solar power applications.

Pb Free

Halogen free

RoHS compliant

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