Vishay EF Type N-Channel Single MOSFETs, 31 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60EF-T1GE3

Subtotaal (1 rol van 3000 eenheden)*

€ 11.085,00

(excl. BTW)

€ 13.413,00

(incl. BTW)

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3000 +€ 3,695€ 11.085,00

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RS-stocknr.:
653-081
Fabrikantnummer:
SIHR120N60EF-T1GE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

Single MOSFETs

Channel Type

Type N

Maximum Continuous Drain Current Id

31A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK

Series

EF

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.125Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

45nC

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

278W

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

8 mm

Automotive Standard

No

Land van herkomst:
CN
The Vishay 4th generation E Series Power MOSFET featuring a fast body diode for improved switching efficiency. It delivers a low figure of merit (FOM), reduced effective capacitance, and minimized switching and conduction losses. Housed in a PowerPAK 8x8LR package, it's Ideal for server, telecom, lighting, industrial, and solar power applications.

Pb Free

Halogen free

RoHS compliant

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