Vishay EF Type N-Channel Power MOSFET, 31 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60EF-T1GE3

RS-stocknr.:: 653-081
Fabrikantnummer:: SIHR120N60EF-T1GE3
Fabrikant:: Vishay

Vishay EF Type N-Channel Power MOSFET, 31 A, 600 V Enhancement, 8-Pin PowerPAK SIHR120N60EF-T1GE3

Subtotaal (1 rol van 3000 eenheden)*

€ 8.895,00

(excl. BTW)

€ 10.764,00

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per rol*
3000 +	€ 2,965	€ 8.895,00

*prijsindicatie

RS-stocknr.:: 653-081
Fabrikantnummer:: SIHR120N60EF-T1GE3
Fabrikant:: Vishay

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Vishay
	Channel Type	Type N
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	31A
	Maximum Drain Source Voltage Vds	600V
	Package Type	PowerPAK
	Series	EF
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.125Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30V
	Typical Gate Charge Qg @ Vgs	45nC
	Maximum Power Dissipation Pd	278W
	Forward Voltage Vf	1.2V
	Maximum Operating Temperature	150°C
	Width	8mm
	Standards/Approvals	RoHS
	Length	10.42mm
	Automotive Standard	No

	Alles selecteren
	Merk Vishay
	Channel Type Type N
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 31A
	Maximum Drain Source Voltage Vds 600V
	Package Type PowerPAK
	Series EF
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.125Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30V
	Typical Gate Charge Qg @ Vgs 45nC
	Maximum Power Dissipation Pd 278W
	Forward Voltage Vf 1.2V
	Maximum Operating Temperature 150°C
	Width 8mm
	Standards/Approvals RoHS
	Length 10.42mm
	Automotive Standard No

Datasheet - SIHR120N60EF-T1GE3

Land van herkomst:: CN

Vishay Series EF Power MOSFET, 600V Drain Source Voltage, 31A Maximum Continuous Drain Current - SIHR120N60EF-T1GE3

This power MOSFET is a high-voltage N-channel transistor designed for switching and power conversion roles in industrial and electronic systems. It operates as an enhancement-mode device suitable for applications requiring robust high-voltage handling, fast gate control and surface-mounted assembly.

Features and Benefits:

• 600V rating enables high-voltage switching applications • 31A continuous drain current supports substantial load handling • 0.125Ω on-resistance reduces conduction losses • 45nC typical gate charge allows predictable switching behaviour • 278W power dissipation permits high-power operation • -55°C to 150°C range supports wide thermal environments

Applications

• Suitable for high-voltage SMPS and power supplies • Ideal for industrial motor drives and inverters • Used for inductive load switching in automation systems • Can be used for high-voltage DC-DC converters • Suitable for power stages in welding and heating controls

What package and mounting form does it use for PCB assembly?

It is supplied in a PowerPAK surface-mount package with an 8-pin configuration suited to automated placement.

What gate voltage limits must designers observe?

The maximum gate-to-source rating is 30V, so gate drive circuits should remain within this boundary.

How should thermal management be approached for high-power tasks?

Design should account for the 278W dissipation capability with appropriate PCB copper, thermal vias or heatsinking to maintain junction temperatures within limits.

What maximum drain-source voltage can be expected during operation?

The device is rated to withstand up to 600V between drain and source under specified conditions.