Vishay EF Type N-Channel MOSFET, 16 A, 650 V Enhancement, 4-Pin PowerPAK 8 x 8
- RS-stocknr.:
- 200-6812
- Fabrikantnummer:
- SIHH186N60EF-T1GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 24,84
(excl. BTW)
€ 30,055
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 01 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 4,968 | € 24,84 |
| 25 - 45 | € 3,68 | € 18,40 |
| 50 - 120 | € 3,08 | € 15,40 |
| 125 - 245 | € 2,734 | € 13,67 |
| 250 + | € 2,584 | € 12,92 |
*prijsindicatie
- RS-stocknr.:
- 200-6812
- Fabrikantnummer:
- SIHH186N60EF-T1GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | EF | |
| Package Type | PowerPAK 8 x 8 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 193mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Power Dissipation Pd | 114W | |
| Maximum Operating Temperature | 150°C | |
| Length | 8.1mm | |
| Height | 8.1mm | |
| Width | 1.05 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series EF | ||
Package Type PowerPAK 8 x 8 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 193mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Power Dissipation Pd 114W | ||
Maximum Operating Temperature 150°C | ||
Length 8.1mm | ||
Height 8.1mm | ||
Width 1.05 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay SIHH186N60EF-T1GE3 is a EF series power MOSFET with fast body diode.
4th generation E series technology
Low figure-of-merit
Low effective capacitance
Reduced switching and conduction losses
Avalanche energy rated (UIS)
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