Vishay SIR5712DP Type N-Channel Single MOSFETs, 18 A, 150 V Enhancement, 8-Pin PowerPAK SIR5712DP-T1-GE3
- RS-stocknr.:
- 653-110
- Fabrikantnummer:
- SIR5712DP-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 1.590,00
(excl. BTW)
€ 1.920,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 6.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,53 | € 1.590,00 |
*prijsindicatie
- RS-stocknr.:
- 653-110
- Fabrikantnummer:
- SIR5712DP-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK | |
| Series | SIR5712DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0555Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 40W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 5.8nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 5.15 mm | |
| Height | 1.04mm | |
| Length | 6.15mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK | ||
Series SIR5712DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0555Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 40W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 5.8nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 5.15 mm | ||
Height 1.04mm | ||
Length 6.15mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay N-channel MOSFET designed for high-efficiency switching in power-dense systems. It supports up to 150 V drain-source voltage. Packaged in PowerPAK SO-8, it utilizes TrenchFET Gen V technology to deliver low RDS(on), reduced gate charge, and excellent thermal performance.
Pb Free
Halogen free
RoHS compliant
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