Vishay SiR N channel-Channel MOSFET, 680 A, 30 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4300DP
- RS-stocknr.:
- 735-147
- Fabrikantnummer:
- SiRS4300DP
- Fabrikant:
- Vishay
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€ 3,77
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€ 4,56
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- Verzending vanaf 01 oktober 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 3,77 |
| 10 - 49 | € 2,34 |
| 50 - 99 | € 1,80 |
| 100 + | € 1,33 |
*prijsindicatie
- RS-stocknr.:
- 735-147
- Fabrikantnummer:
- SiRS4300DP
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 680A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SO-8S | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0004Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 30V | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Maximum Power Dissipation Pd | 278W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2mm | |
| Length | 6mm | |
| Width | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 680A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SO-8S | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0004Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 30V | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Maximum Power Dissipation Pd 278W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 2mm | ||
Length 6mm | ||
Width 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay N-Channel MOSFET rated for 30V drain-source voltage, engineered for ultra-low loss synchronous rectification in AI power server buck converters and high-current power delivery systems. It achieves exceptionally low on-resistance of 400μΩ at 10V gate drive to maximize efficiency in extreme high-density applications.
278W power dissipation rating
100% Rg and UIS tested construction
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