Vishay SiR N channel-Channel MOSFET, 359 A, 60 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4600DP

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€ 5,06

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RS-stocknr.:
735-137
Fabrikantnummer:
SiRS4600DP
Fabrikant:
Vishay
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Merk

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

359A

Maximum Drain Source Voltage Vds

60V

Package Type

PowerPAK SO-8S

Series

SiR

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00115Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Maximum Power Dissipation Pd

278W

Typical Gate Charge Qg @ Vgs

108nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

60V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

2mm

Length

6mm

Width

5mm

Automotive Standard

No

Land van herkomst:
CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, designed for ultra-low loss switching in AI power server applications and high-current DC/DC converters. It features industry-leading on-resistance of 1.2mΩ maximum at 10V gate drive to maximize efficiency in synchronous rectification topologies.

334A continuous drain current at TC=25°C

Low RDS(on) x Qg figure-of-merit for optimal switching efficiency

100% Rg and UIS tested for reliability

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