Vishay SiR N channel-Channel MOSFET, 100 A, 60 V Enhancement, 8-Pin PowerPAK SO-8 SiR626DP

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€ 2,66

(excl. BTW)

€ 3,22

(incl. BTW)

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1 - 9€ 2,66
10 - 24€ 1,74
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500 +€ 0,92

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RS-stocknr.:
735-140
Fabrikantnummer:
SiR626DP
Fabrikant:
Vishay
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Merk

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

60V

Series

SiR

Package Type

PowerPAK SO-8

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0017Ω

Channel Mode

Enhancement

Forward Voltage Vf

60V

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

68nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Width

6mm

Standards/Approvals

RoHS

Height

2mm

Length

7mm

Automotive Standard

No

Land van herkomst:
CN
The Vishay N-Channel MOSFET rated for 60V drain-source voltage, optimized for high-efficiency switching in AI power server DC/DC converters and synchronous rectification circuits. It achieves very low on-resistance of 1.7mΩ maximum at 10V gate drive for minimal conduction losses in high-current applications

52nC typical total gate charge for fast switching

Low RDS(on) x Qg figure-of-merit

15°C/W maximum junction-to-ambient thermal resistance

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