Vishay SiR N channel-Channel MOSFET, 265 A, 80 V Enhancement, 8-Pin PowerPAK SO-8S SiRS5800DP
- RS-stocknr.:
- 735-133
- Fabrikantnummer:
- SiRS5800DP
- Fabrikant:
- Vishay
Afbeelding representeert productcategorie
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 3,40
(excl. BTW)
€ 4,11
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 07 januari 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 3,40 |
| 10 - 49 | € 2,10 |
| 50 - 99 | € 1,63 |
| 100 + | € 1,20 |
*prijsindicatie
- RS-stocknr.:
- 735-133
- Fabrikantnummer:
- SiRS5800DP
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | N channel | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 265A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | PowerPAK SO-8S | |
| Series | SiR | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0018Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 240W | |
| Forward Voltage Vf | 80V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 5mm | |
| Height | 2mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type N channel | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 265A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type PowerPAK SO-8S | ||
Series SiR | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0018Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 240W | ||
Forward Voltage Vf 80V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 5mm | ||
Height 2mm | ||
Length 6mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay N-Channel MOSFET rated for 80V drain-source voltage, optimized for low-loss synchronous rectification in AI power server buck converters. It achieves industry-leading on-resistance of 1.8mΩ maximum at 10V gate drive for superior efficiency under high load conditions.
265A pulsed drain current rating
81nC typical total gate charge
52°C/W thermal resistance junction-to-case
Gerelateerde Links
- Vishay SIRS Type N-Channel MOSFET 80 V Enhancement, 8-Pin SO-8 SIRS5800DP-T1-GE3
- Vishay SiR N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4302DP
- Vishay SiR N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4400DP
- Vishay SiR N channel-Channel MOSFET 30 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4300DP
- Vishay SiR N channel-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK SO-8S SiRS5100DP
- Vishay SiR N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8S SiRS4600DP
- Vishay SiR N channel-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK SO-8 SiR626DP
- Vishay SiR N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SiR638ADP