Vishay TrenchFET Dual N-Channel MOSFET, 125 A, 30 V Enhancement, 12-Pin PowerPAIR 3 x 3FS SIZF5300DT-T1-UE3
- RS-stocknr.:
- 736-656
- Fabrikantnummer:
- SIZF5300DT-T1-UE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 1 eenheid)*
€ 2,17
(excl. BTW)
€ 2,63
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending vanaf 01 juli 2027
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Rol(len) | Per rol |
|---|---|
| 1 + | € 2,17 |
*prijsindicatie
- RS-stocknr.:
- 736-656
- Fabrikantnummer:
- SIZF5300DT-T1-UE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 125A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAIR 3 x 3FS | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.00351Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 32nC | |
| Maximum Power Dissipation Pd | 56.8W | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 125A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAIR 3 x 3FS | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.00351Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 16V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 32nC | ||
Maximum Power Dissipation Pd 56.8W | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Width 3.3mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- IL
The Vishay High performance Dual N-Channel MOSFET designed for efficient power management in various applications, delivering superior thermal performance and switching capabilities.
TrenchFET Gen V technology optimises efficiency and performance
Symmetric dual n-channel configuration enables versatile circuitry designs
High side and low side MOSFETs support 50% duty cycle applications
Extensive testing ensures reliable operation under rigorous conditions
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