Vishay SQJ N channel-Channel Single MOSFETs, 100 A, 60 V Enhancement Mode, 8-Pin P SQJ766EP-T1_GE3
- RS-stocknr.:
- 829-354
- Fabrikantnummer:
- SQJ766EP-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 2,48
(excl. BTW)
€ 3,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 11 maart 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 2,48 |
| 10 - 99 | € 1,60 |
| 100 - 499 | € 1,08 |
| 500 - 999 | € 0,92 |
| 1000 + | € 0,85 |
*prijsindicatie
- RS-stocknr.:
- 829-354
- Fabrikantnummer:
- SQJ766EP-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SQJ | |
| Package Type | P | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0046Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 93W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.04mm | |
| Standards/Approvals | RoHS Compliant | |
| Width | 4.90mm | |
| Length | 6.15mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SQJ | ||
Package Type P | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0046Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 93W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.04mm | ||
Standards/Approvals RoHS Compliant | ||
Width 4.90mm | ||
Length 6.15mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay high-performance automotive dual N-Channel MOSFET designed for demanding applications. It delivers robust efficiency and reliability in various electronic systems.
TrenchFET Gen IV technology ensures efficient performance
AEC-Q101 qualified for automotive applications
100% R and UIS tested for reliability
Low on-state resistance reduces energy loss
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