Vishay SQJ N channel-Channel Single MOSFETs, 95 A, 200 V Enhancement Mode, 8-Pin P SQJQ190ER-T1_GE3
- RS-stocknr.:
- 829-355
- Fabrikantnummer:
- SQJQ190ER-T1_GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 5,16
(excl. BTW)
€ 6,24
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 15 januari 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 5,16 |
| 10 - 99 | € 3,38 |
| 100 - 499 | € 2,48 |
| 500 - 999 | € 2,22 |
| 1000 + | € 2,11 |
*prijsindicatie
- RS-stocknr.:
- 829-355
- Fabrikantnummer:
- SQJQ190ER-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 95A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | SQJ | |
| Package Type | P | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0143Ω | |
| Channel Mode | Enhancement Mode | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.04mm | |
| Width | 8mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 8.10mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 95A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series SQJ | ||
Package Type P | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0143Ω | ||
Channel Mode Enhancement Mode | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1.04mm | ||
Width 8mm | ||
Standards/Approvals RoHS Compliant | ||
Length 8.10mm | ||
Automotive Standard No | ||
- Land van herkomst:
- DE
The Vishay power MOSFET offers exceptional performance in automotive applications, ensuring reliable operation under challenging conditions with robust thermal management capabilities for both performance and lifespan.
TrenchFET technology for enhanced efficiency
AEC-Q101 qualified for automotive industry reliability
Thin profile of 1.9 mm complements Compact designs
Maximum drain-source voltage of 200 V supports high-performance circuits
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