Vishay TrenchFET P-Channel Single MOSFETs, -6.3 A, -30 V Enhancement Mode, 4-Pin MICRO FOOT SI8409ADB-T1-E1
- RS-stocknr.:
- 847-935
- Fabrikantnummer:
- SI8409ADB-T1-E1
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 1 eenheid)*
€ 0,96
(excl. BTW)
€ 1,16
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 02 september 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Rol(len) | Per rol |
|---|---|
| 1 - 9 | € 0,96 |
| 10 - 99 | € 0,68 |
| 100 - 499 | € 0,43 |
| 500 - 999 | € 0,30 |
| 1000 + | € 0,25 |
*prijsindicatie
- RS-stocknr.:
- 847-935
- Fabrikantnummer:
- SI8409ADB-T1-E1
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | P-Channel | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | -6.3A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | MICRO FOOT | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 0.046Ω | |
| Channel Mode | Enhancement Mode | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 12V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.77W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS3 Compliant | |
| Length | 1.60mm | |
| Height | 0.62mm | |
| Width | 1.60mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type P-Channel | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id -6.3A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type MICRO FOOT | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 0.046Ω | ||
Channel Mode Enhancement Mode | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 12V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.77W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS3 Compliant | ||
Length 1.60mm | ||
Height 0.62mm | ||
Width 1.60mm | ||
Automotive Standard No | ||
- Land van herkomst:
- DE
The Vishay P-Channel MOSFET that functions effectively as a load, battery, and charger switch. Its ultra-compact dimensions and low on-resistance make it highly efficient for various electronic applications.
Micro Foot packaging allows for minimal footprint without compromising performance
Low on-resistance maximises efficiency in power management
Compatible with a variety of other devices, ensuring versatility in applications
Supports high current ratings, enhancing reliability in demanding conditions
Operates within broad temperature ranges to accommodate diverse environments
Gerelateerde Links
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin MICRO FOOT SI8483DB-T2-E1
- Vishay TrenchFET N channel-Channel MOSFET 20 V Enhancement, 4-Pin MICRO FOOT SI8916EDB-T6-E1
- Vishay Type N-Channel MOSFET 8 V, 4-Pin WLCSP SI8424CDB-T1-E1
- Vishay Type N-Channel MOSFET 8 V, 6-Pin MICRO FOOT SI8416DB-T2-E1
- Vishay SI8824EDB Type N-Channel MOSFET 20 V, 4-Pin MICRO FOOT SI8824EDB-T2-E1
- Vishay SI8802DB Type N-Channel MOSFET 8 V Enhancement, 4-Pin MICRO FOOT SI8802DB-T2-E1
- Vishay Si8489EDB Type P-Channel MOSFET 20 V Enhancement, 4-Pin MICRO FOOT SI8489EDB-T2-E1
- Vishay TrenchFET N-Channel Single MOSFETs 20 V Enhancement Mode, 6-Pin TSOP-6 SI3552BDV-T1-GE3