Vishay TrenchFET Type N-Channel MOSFET, 3.5 A, 8 V Enhancement, 4-Pin MICRO FOOT
- RS-stocknr.:
- 180-7328
- Fabrikantnummer:
- SI8802DB-T2-E1
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 447,00
(excl. BTW)
€ 540,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 17 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,149 | € 447,00 |
*prijsindicatie
- RS-stocknr.:
- 180-7328
- Fabrikantnummer:
- SI8802DB-T2-E1
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3.5A | |
| Maximum Drain Source Voltage Vds | 8V | |
| Package Type | MICRO FOOT | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 54mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.6W | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 4.3nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 0.8mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3.5A | ||
Maximum Drain Source Voltage Vds 8V | ||
Package Type MICRO FOOT | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 54mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.6W | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 4.3nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 0.8mm | ||
Automotive Standard No | ||
The Vishay Siliconix SI8802DB series TrenchFET N channel power MOSFET has drain to source voltage of 8 V. It is maximum power dissipation of 0.9 W and mainly used in Load switch with low voltage drop.
Low on-resistance
Halogen free
Pb free
Gerelateerde Links
- Vishay TrenchFET Type N-Channel MOSFET 8 V Enhancement, 4-Pin MICRO FOOT SI8802DB-T2-E1
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin MICRO FOOT
- Vishay TrenchFET Type P-Channel MOSFET 12 V Enhancement, 6-Pin MICRO FOOT SI8483DB-T2-E1
- Vishay TrenchFET N channel-Channel MOSFET 20 V Enhancement, 4-Pin MICRO FOOT SI8916EDB-T6-E1
- Vishay Si8489EDB Type P-Channel MOSFET 20 V Enhancement, 4-Pin MICRO FOOT
- Vishay Si8489EDB Type P-Channel MOSFET 20 V Enhancement, 4-Pin MICRO FOOT SI8489EDB-T2-E1
- Vishay Type N-Channel MOSFET 20 V, 4-Pin MICRO FOOT
- Vishay Type N-Channel MOSFET 8 V, 6-Pin MICRO FOOT