Vishay S N-Channel MOSFET, 28 A, 650 V N, 8-Pin PowerPAK 10 x 12 SIHK135N65S-T1-GE3
- RS-stocknr.:
- 878-898
- Fabrikantnummer:
- SIHK135N65S-T1-GE3
- Fabrikant:
- Vishay
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 1 eenheid)*
€ 1,69
(excl. BTW)
€ 2,04
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 20 september 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Rol(len) | Per rol |
|---|---|
| 1 - 9 | € 1,69 |
| 10 - 99 | € 1,14 |
| 100 - 499 | € 0,96 |
| 500 - 999 | € 0,92 |
| 1000 + | € 0,89 |
*prijsindicatie
- RS-stocknr.:
- 878-898
- Fabrikantnummer:
- SIHK135N65S-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 28A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK 10 x 12 | |
| Series | S | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.121Ω | |
| Channel Mode | N | |
| Maximum Power Dissipation Pd | 278W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 28A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK 10 x 12 | ||
Series S | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.121Ω | ||
Channel Mode N | ||
Maximum Power Dissipation Pd 278W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay Power MOSFET designed to manage switching and conduction efficiently, making it an essential component for various power supply applications.
Latest generation SF series technology, ensuring optimal performance
Low figure of merit (FOM) for enhanced energy efficiency
Avalanche energy rated, offering improved reliability under stress
Single Pulse avalanche energy capacity, catering to demanding applications
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