Vishay SIHK Type N-Channel MOSFET, 24 A, 650 V Enhancement, 8-Pin PowerPAK 10 x 12 SIHK105N60E-T1-GE3

Subtotaal (1 rol van 2000 eenheden)*

€ 5.282,00

(excl. BTW)

€ 6.392,00

(incl. BTW)

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2000 +€ 2,641€ 5.282,00

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RS-stocknr.:
268-8310
Fabrikantnummer:
SIHK105N60E-T1-GE3
Fabrikant:
Vishay
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Merk

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

24A

Maximum Drain Source Voltage Vds

650V

Package Type

PowerPAK 10 x 12

Series

SIHK

Mount Type

PCB

Pin Count

8

Maximum Drain Source Resistance Rds

0.1Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±30 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

132W

Typical Gate Charge Qg @ Vgs

53nC

Maximum Operating Temperature

150°C

Length

9.9mm

Standards/Approvals

RoHS

Automotive Standard

No

Land van herkomst:
CN
The Vishay power MOSFET with 4th generation E series technology has reduced switching and conduction losses and it is used in applications such as switch mode power supplies, server power supplies and power factor correction power supplies.

Low effective capacitance

Avalanche energy rated

Low figure of merit

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