Infineon HEXFET N-Channel MOSFET, 49 A, 55 V Enhancement, 3-Pin TO-220

RS-stocknr.:: 919-4769
Fabrikantnummer:: IRFZ44NPBF
Fabrikant:: Infineon

Infineon HEXFET N-Channel MOSFET, 49 A, 55 V Enhancement, 3-Pin TO-220

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Subtotaal (1 tube van 50 eenheden)*

€ 32,90

(excl. BTW)

€ 39,80

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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50 stuk(s) klaar voor verzending vanaf een andere locatie
Plus verzending 2.000 stuk(s) vanaf 01 oktober 2026
Plus verzending 2.000 stuk(s) vanaf 11 februari 2027

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 0,658	€ 32,90
100 - 200	€ 0,539	€ 26,95
250 - 450	€ 0,50	€ 25,00
500 - 1200	€ 0,467	€ 23,35
1250 +	€ 0,434	€ 21,70

*prijsindicatie

RS-stocknr.:: 919-4769
Fabrikantnummer:: IRFZ44NPBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	49A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	17.5mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	94W
	Typical Gate Charge Qg @ Vgs	63nC
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Width	4.4mm
	Standards/Approvals	No
	Height	8.77mm
	Length	10.67mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 49A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 17.5mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 94W
	Typical Gate Charge Qg @ Vgs 63nC
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Width 4.4mm
	Standards/Approvals No
	Height 8.77mm
	Length 10.67mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 49A Maximum Continuous Drain Current, 94W Maximum Power Dissipation - IRFZ44NPBF

This MOSFET is designed for performance in automation, electronics, and electrical engineering applications. It can manage high current levels with low resistance, enhancing the efficiency of electronic circuits. With HEXFET technology, the device offers improved reliability and effectiveness in various environments.

Features & Benefits

• Utilises enhancement mode for responsive control

• Low resistance of 17.5mΩ for effective power management

• Fast switching speeds for improved system performance

Applications

• Suitable for DC-DC converters

• Motor drives and control systems

• Renewable energy systems, such as solar inverters

What impact does the low resistance have on performance?

The low on-resistance of 17.5mΩ enhances efficiency by minimising energy losses during operation, which is advantageous in high-current circuits.

How does temperature affect the continuous drain current?

Continuous drain current is rated at 49A at 25°C and decreases to 35A at 100°C, ensuring safe usage in varying environments.

Can this component handle repetitive avalanche conditions?

Yes, it is designed to withstand repetitive avalanche conditions with an avalanche current rating of up to 25A and an avalanche energy of 9.4mJ, providing additional durability.

What type of applications benefit most from using this MOSFET?

This component is particularly useful in high-power applications, including industrial automation controls and automotive systems requiring efficient energy conversion.

Is it compatible with standard PCB designs?

Yes, its TO-220AB package is widely used in various PCB layouts, allowing for straightforward integration into existing designs.