Infineon HEXFET Type N-Channel MOSFET, 25 A, 200 V Enhancement, 3-Pin TO-220 IRFB5620PBF

RS-stocknr.:: 124-9009
Fabrikantnummer:: IRFB5620PBF
Fabrikant:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 25 A, 200 V Enhancement, 3-Pin TO-220 IRFB5620PBF

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Subtotaal (1 tube van 50 eenheden)*

€ 64,70

(excl. BTW)

€ 78,30

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 90,00

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1.300 stuk(s) klaar voor verzending vanaf een andere locatie

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Aantal stuks	Per stuk	Per tube*
50 - 50	€ 1,294	€ 64,70
100 - 200	€ 1,259	€ 62,95
250 - 450	€ 1,226	€ 61,30
500 - 950	€ 1,194	€ 59,70
1000 +	€ 1,164	€ 58,20

*prijsindicatie

RS-stocknr.:: 124-9009
Fabrikantnummer:: IRFB5620PBF
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	25A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	73mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	25nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	14W
	Maximum Operating Temperature	175°C
	Width	4.83mm
	Standards/Approvals	No
	Length	10.67mm
	Height	9.02mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 25A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 73mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 25nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 14W
	Maximum Operating Temperature 175°C
	Width 4.83mm
	Standards/Approvals No
	Length 10.67mm
	Height 9.02mm
	Automotive Standard No

Land van herkomst:: MX

Infineon HEXFET Series MOSFET, 200V Maximum Drain Source Voltage, 25A Maximum Continuous Drain Current - IRFB5620PBF

This MOSFET is a high-voltage, N-channel semiconductor switch designed for through-hole power applications. It operates as an enhancement-mode device suitable for switching and amplification tasks in demanding environments, and it is housed in a TO-220 package for straightforward mounting and heat-sinking.

Features and Benefits:

• 200V drain voltage supports high-voltage switching
• 25A continuous drain current enables robust load handling
• 73mΩ Rds(on) reduces conduction losses in power circuits
• 25nC gate charge allows controlled switching speeds
• 14W power dissipation permits moderate thermal loading
• Gate tolerance to 20V protects against overdrive events

Applications

• Suitable for high-voltage motor driver stages
• Ideal for switch-mode power supplies in industrial equipment
• Used for inverter-leg switching in power conversion
• Can be used for audio amplifier output stages
• Appropriate for general-purpose power switching on through-hole boards

What temperature extremes can it tolerate during operation?

It is specified to operate from -55°C up to 175°C, enabling use across extended thermal ranges.

How does the package affect mounting and thermal management?

The TO-220 through-hole package simplifies attachment to heatsinks and printed circuit boards for effective heat dissipation.

What gate voltage limits should be observed when driving it?

The maximum gate-to-source voltage rating is 20V, so gate drivers should remain within this threshold.

How does its channel type influence circuit design?

As an N-channel enhancement-mode device, it requires a positive gate-source voltage to conduct, which suits low-side and high-side switch topologies when driven appropriately.