Infineon HEXFET Type N-Channel MOSFET, 25 A, 200 V Enhancement, 3-Pin TO-220 IRFB5620PBF

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Subtotaal (1 tube van 50 eenheden)*

€ 54,25

(excl. BTW)

€ 65,65

(incl. BTW)

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  • Plus verzending 1.500 stuk(s) vanaf 29 december 2025
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Aantal stuks
Per stuk
Per tube*
50 - 50€ 1,085€ 54,25
100 - 200€ 0,879€ 43,95
250 - 450€ 0,824€ 41,20
500 - 950€ 0,77€ 38,50
1000 +€ 0,719€ 35,95

*prijsindicatie

RS-stocknr.:
124-9009
Fabrikantnummer:
IRFB5620PBF
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

73mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

25nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

14W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.67mm

Height

9.02mm

Width

4.83 mm

Automotive Standard

No

Land van herkomst:
MX

Digital Audio MOSFET, Infineon


Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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